题目：Ultrawide Bandgap Gallium Oxide (β-Ga2O3) Resonant Nanoelectromechanical Systems (NEMS)
报告人：郑旭骞教授, 南京邮电大学
时间：2022年7月22日（周五）15:00 (北京时间)
地点：南京航空航天大学明故宫校区A18-1109会议室
主办单位：机械结构力学及控制国家重点实验室、航空学院、智能装备动力学中心、航空航天交叉研究院、校科协
报告内容摘要：
Beta gallium oxide (β-Ga2O3) is an emerging ultra-wide bandgap (UWBG) semiconductor (Eg = 4.5-4.9 eV). The crystal is outstanding in sustaining high electrical field because of its UWBG, making it attractive for power electronic and radio frequency (RF) applications. Thanks to the capability of growth from liquid phase, bulk β-Ga2O3 crystal can be cost-effectively synthesized with exceptional crystal quality. Furthermore, β-Ga2O3 possesses excellent Young’s modulus (EY = 261 GPa) and speed of sound (c = 6,600 m/s), suitable for making mechanical devices. The excellent ensemble of attributes in β-Ga2O3 enables new UWBG nanoelectromechanical systems (NEMS) for future electromechanically coupled and tunable β-Ga2O3 electronic, optoelectronic, and physical sensing devices and systems.
In this talk, I will present our current development of β-Ga2O3 NEMS and describe the recent advances enabled by our effort in engineering β-Ga2O3 nanostructures into functional devices and by exploring device physics in such platforms. We demonstrate a family of β-Ga2O3 NEMS resonators with fundamental-mode frequencies from 4 MHz to 75 MHz and quality (Q) factors up to 1700. In additional to basic nanomechanical devices, we demonstrate real-time solar-blind ultraviolet (SBUV) light detection by using the β-Ga2O3 NEMS and investigate β-Ga2O3 vibrating channel transistors for electromechanical coupling of the β-Ga2O3 NEMS resonators. Our study facilitates the integration of β-Ga2O3 NEMS on chip with β-Ga2O3 electronic circuits, supplementing the rapidly emerging β-Ga2O3 electronics and optoelectronics.
报告人简介：
郑旭骞，南京邮电大学海外高层次引进人才，集成电路科学与工程学院教授，长
